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Free-carrier absorption in Be- and C-doped GaAs epilayers and far-infrared detector applications
  • 期刊名称：J. Appl. Phys
  • 时间：0
  • 页码：89, 3295-3300 (2001)
  • 语言：英文
  • 相关项目：新型同质结内发射远红外探测器的物理与器件研究
作者： A.L. Korotkov|A.G.U. Perera|沈文忠等|
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新型同质结内发射远红外探测器的物理与器件研究
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