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Response for the comments on “Study on the quantum efficiency of resonant cavity enhanced GaAs far-i
  • 期刊名称：J. Appl. Phys
  • 时间：0
  • 页码：93, 788 (2003)
  • 语言：英文
  • 相关项目：新型同质结内发射远红外探测器的物理与器件研究
作者： 骆海涛|张月蘅|沈文忠|
同期刊论文项目
新型同质结内发射远红外探测器的物理与器件研究
期刊论文 20 会议论文 4
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Study of band gap narrowing effect in n-GaAs for the application of far-infrared detection
Far-infrared spectroscopic study of GaAs multi-layer n -i structures
Study on the quantum efficiency of resonant cavity enhanced GaAs far-infrared detectors
Photon absorption in resonant cavity enhanced GaAs far-infrared detectors
Radiative recombination characteristics in GaAs multilayer n -i interfaces
Free-carrier absorption in Be- and C-doped GaAs epilayers and far-infrared detector applications
Study of exciton(longitudinal-optical phonon coupling in quantum wells for opto-electronic applicati
Low dark current far infrared detector with an optical cavity architecture
Effect of interface states on negative capacitance characteristics in GaAs homojunction far-infrared
Recent progress in mid- and far-infrared semiconductor detectors
Effect of interface states on the performance of GaAs p -i far-infrared detectors
GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
Application of free carrier absorption for far-infrared detection
Novel GaAs homojunction far-infrared detectors
Demonstration of bottom mirrors for resonant cavity enhanced GaAs homojunction far-infrared detector
Design of bottom mirrors for resonant cavity enhanced GaAs homojunction far-infrared detectors
Evidence for the formation of GaAs homojunction far-infrared detection by magnetic field dependent H
Study on the carrier concentration in n-GaAs homojunction multilayer structures by reflection spectr
GaAs远红外探测器中的辐射复合特性研究