中文摘要：

针对高功率脉冲磁控溅射（HIPIMS）存在的低溅射率靶材放电时离化率有待进一步提高的问题,通过增加辅助阳极的方法来提高HIPIMS的离化率。研究了辅助阳极电压、阳极位置以及磁控阳极的类型对HIPIMS放电特性的影响。结果表明：随着阳极电压的增加,基体离子电流值逐渐增大,并且当阳极电压为90 V时,基体离子电流值最高可增加到4倍。随着阳极位置由45°位置处变化为180°位置处时,由于电场在与磁场垂直方向上的分量逐渐减少,导致了基体离子电流值呈现出逐渐下降的趋势。此外,当阳极附加扩散型非平衡磁场后,获得的基体离子电流值最大。辅助阳极处于不同位置时,随着阳极电压的增加,HIPIMS放电系统中Ar0、Ar1＋、V0和V1＋粒子谱线强度均有不同程度的增加。当阳极处于45°位置时,各种粒子谱线强度增加最为显著。增加辅助阳极后HIPIMS放电时真空室内各个位置处的基体离子电流值均有所增加,并且当阳极处于45°位置时的增加幅度最为明显,系统等离子体密度增幅最高可增加到3倍。

英文摘要：

We addressed the problem of low ionization rate inhigh power impulse magnetron sputtering （ HIP- IMS） discharge of low sputtering rate target. The effect of the voltage, orientation and unbalanced magnetic field of the auxiliary anode on the discharge properties of HIPIMS was investigated. The results show that the voltage, orien- tation and magnetic field of the auxiliary anodes significantly affect the substrate ion current. For example, as the voltage increased,the substrate ion current increased by 4 times at 90 V ;as the anode tilted from 45°to 180° ,the ion current decreased, possibly because of the electric field decrease in direction normal to the magnetic field. Moreo- ver, the diffusion of unbalanced magnetic field maximized the ion current. Orientated at 45 °, the emission intensities of Ar,Ar1＋ ,V and V1＋ sharply increased with the increase of the anode voltage,accompanied by an increase of the plasma density, up to 3 times at most.