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A novel layout placement structure to mitigate the multi-bit-upset in 6T-SRAM cell
  • ISSN号：1349-2543
  • 期刊名称：IEICE Electronics Express
  • 时间：2014.6
  • 页码：1-8
  • 相关项目：基于SOI薄膜的双极场效应光敏器件研究
作者： Xu Hui|Zeng Yun|
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基于SOI薄膜的双极场效应光敏器件研究
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