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Studies on the application of n-InGaZnO/p-Si heterojunctions in active pixel sensor as photodiode
  • ISSN号：1454-4164
  • 期刊名称：JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • 时间：2014.8
  • 页码：919-924
  • 相关项目：基于SOI薄膜的双极场效应光敏器件研究
作者： Guoliang Zhang,|Yun Zeng|Yongming Yan|Yongqing Leng|
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基于SOI薄膜的双极场效应光敏器件研究
期刊论文 7
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