中文摘要：

研究了电子束蒸发淀积的非合金膜系Au/Pt/Ti/p-InP（2×10^18cm^-3）接触的物理特性,通过450℃、4 min的快速退火,获得了欧姆接触,其比接触电阻为7.3×10^-5Wcm^2。接触电极退火后,采用离子溅射法淀积加厚电极Cr/Au。利用俄歇电子能谱（AES）进行深度剖面分析,表明Pt层能够相对有效地阻挡Au和InP的互扩散,但仍会有少部分的Au穿透Pt层进入InP层;金属与p-InP低阻欧姆接触的形成由界面处金属和InP的化学及其冶金学反应决定,并且少量的In-Au化合物的形成可能有益于接触特性的改善。结果表明,采用合适的退火条件可以制备出低阻、表面光滑、可靠性高的欧姆接触。

英文摘要：

The electrical and metallurgical behavior of Ti/Pt/Au contacts on p-InP was investigated.The contacts were transformed to an ohmic contacts at the temperature about 450 ℃.Low resistance ohmic contacts（pc=7.3×10^-5 Ωcm^2） were achieved after annealing at 450 ℃ for 4 minutes.To approach device process,Cr/Au（20 nm/400 nm） was deposited on the contact pads after the annealing process.The result indicates that the contacts of low resistance,smooth surface and high reliability are fabricated in a moderate condition.The auger electron spectroscopy（AES） depth-composition profiles indicates that the Pt layer can relatively prevent Au from penetrating into the InP and only a small quantity of Au punched through the Pt layer and penetrated into the InP.The findings of the present study suggests that the formation of ohmic contacts on InP is controlled by chemical and metallurgical reaction between the contact metal and the InP layer,and a few InAux formations are beneficial to contact properties.