中文摘要：

采用闭管扩散方式,对不同结构的异质结外延材料In0.81Al0.19As/In0.81Ga0.19As、InAs0.6P0.4/In0.8Ga0.2As、InP/In0.53Ga0.47As实现了Zn元素的P型掺杂,采用扫描电容显微技术（SCM）和二次离子质谱（SIMS）研究了在芯片制备中高温快速热退火（RTP）处理环节对p-n结结深的影响。结果表明：由于在这3种异质结外延材料中掺杂的Zn元素并未完全激活,导致扩散深度明显大于p-n结结深;高温快速热退火处理并不会显著影响结深的变化,扩散完成后的p-n结深度可以近似为器件最终的p-n结结深;计算了530℃下Zn在In0.81Al0.19As、InAs0.6P0.4、InP中的扩散系数D分别为1.327×10^-12cm^2/s、1.341 10^-12cm^2/s、1.067×10^-12cm^2/s。

英文摘要：

Zn diffusion to form P type doped structure with sealed-ampoule method on different kinds of heterostructure epitaxial materials was carried out,such as In0.81Al0.19As/In0.81Ga0.19As,InAs0.6P0.4/In0.8Ga0.2As and InP/In0.53Ga0.47As.Scanning capacitance microscopy（SCM） and secondary ion mass spectroscopy（SIMS） techniques were adopted to investigate the process of rapid thermal annealing process（RTP） on p-n junction depth variation in the process of the detectors fabrication.The result indicates that due to the doped Zn in these three heterostructure epitaxial materials is not completely activated,the diffusion depth is deeper than the p-n junction depth in evidence.And RTP has almost no effect on junction depth variation which implies that the p-n junction depth after the diffusion process could be considered to the ultimate p-n junction depth of the detector.The diffusion coefficients D of Zn into In0.81Al0.19As,InAs0.6P0.4 and InP under 530 ℃ are figured out,which is 1.327×10^-12 cm^2/s,1.341×10^-12 cm^2/s,1.067×10^-12 cm^2/s respectively.