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Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
  • ISSN号：0022-0248
  • 期刊名称：J. Crystal Growth 241
  • 时间：0
  • 作者或编辑：3448
  • 第一作者所属机构：Institute of Semiconductors, Chinese Academy of Sc
  • 页码：304－308
  • 语言：英文
  • 相关项目：1.3微米量子点激光材料及器件应用
作者： Z.Y. Zhang*|B. Xu|P. Jin|X.Q. Meng|Ch.M. Li|X.L.Ye|D.B. Li Z.G. Wang|
同期刊论文项目
1.3微米量子点激光材料及器件应用
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