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Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of uppe
  • ISSN号：0021-8979
  • 期刊名称：J. Appl. Phys. 93 (11)
  • 时间：0
  • 作者或编辑：3448
  • 第一作者所属机构：Institute of Semiconductors, Chinese Academy of Sc
  • 页码：8898－8902
  • 语言：英文
  • 相关项目：1.3微米量子点激光材料及器件应用
作者： J.He*|Y.C.Zhang|B.Xu|Z.G.Wang|S.C.Xu|
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1.3微米量子点激光材料及器件应用
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