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Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n M
  • ISSN号：0021-4922
  • 期刊名称：Jpn. J. Appl. Phys. 42-1 (3)
  • 时间：0
  • 作者或编辑：3448
  • 第一作者所属机构：Institute of Semiconductors, Chinese Academy of Sc
  • 页码：1154-1157
  • 语言：英文
  • 相关项目：1.3微米量子点激光材料及器件应用
作者： Bo Xu|Zhanguo Wang and Sheng-Chun Qu|Jun He*|Xiao-Dong Wang|
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1.3微米量子点激光材料及器件应用
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