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Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2012.8.8
  • 页码：2130-2138
  • 相关项目：新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
作者： Wang, Lin|Hu, Weida|Chen, Xiaoshuang|Lu, Wei|
同期刊论文项目
新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
期刊论文 14 会议论文 1 专利 1
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