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Spectrum analysis of 2D plasmon in GaN-based high electron mobility transistors
  • ISSN号：1077-260X
  • 期刊名称：IEEE Journal of Selected Topics in Quantum Electro
  • 时间：2013.1.1
  • 页码：-
  • 相关项目：新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
作者： Lin Wang|Xiao-Shuang Chen|Wei-Da Hu|Wei Lu|
同期刊论文项目
新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
期刊论文 14 会议论文 1 专利 1
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