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The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2012.5.5
  • 页码：1393-1401
  • 相关项目：新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
作者： Wang, Xiao-Dong|Hu, Wei-Da|Chen, Xiao-Shuang|Lu, Wei|
同期刊论文项目
新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
期刊论文 14 会议论文 1 专利 1
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