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Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
  • ISSN号：1936-0851
  • 期刊名称：ACS Nano
  • 时间：2012.7.7
  • 页码：6005-6013
  • 相关项目：新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
作者： Jagadish, Chennupati|Lu, Zhen-Yu|Li, Tian-Xin|Parkinson, Patrick|Liao, Zhi-Ming|Liu, Fu-Hao|Lu, Wei|Hu, Wei-Da|Chen, Ping-Ping|
同期刊论文项目
新型高K栅介质双沟道AlN/GaN/AlGaN/GaN基MOS-HEMTs极化和电流坍塌效应研究
期刊论文 14 会议论文 1 专利 1
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