中文摘要：

本文设计了一种通过在版图布局中引入伪集电极的方法来提高锗硅异质结双极晶体管（SiGe HBT）抗单粒子性能的方法。利用半导体器件模拟工具，针对加固前后的SiGe HBT开展了单粒子效应仿真模拟，分析了伪集电极对SiGe HBT电荷收集机理的影响。结果表明，引入的伪集电极形成的新的集电极-衬底结具有较大的反偏能力，加固后SiGe HBT伪集电极通过扩散机理，大量收集单粒子效应产生的电荷，有效地减少了实际集电极的电荷收集量，发射极、基极电荷收集量也有不同程度的降低，加固设计后SiGe HBT的单粒子效应敏感区域缩小，有效的提高了SiGe HBT 器件抗单粒子效应辐射性能。此项工作的开展为SiGe HBT电路级单粒子效应抗辐射加固设计打下良好的基础。

英文摘要：

With the rapid development of satellite, manned space flight and deep space exploration technology, semiconductor devices are used in extreme environments, especially in radiation and low temperature environment. SiGe HBT is a potential candidate for space applications because of its inherent robustness to total ionizing dose （TID） radiation. However, due primarily to charge collection through the collector-substrate （CS） junction and the relatively low substrate doping. , SiGe HBTs are vulnerable to single event effects （SEEs） because of new features of process and structure. Thus, the SEE becomes a key factor in restricting space applications of SiGe HBTs. This paper presents an SEE hardening approach that uses a dummy collector to reduce charge collection in the SiGe HBT. The dummy collector is obtained by using the silicon space between adjacent HBTs. It is obtained without any process modification or area penalty. At first, we build simulation models for both normal and hardened SiGe HBTs, and then carry out SEE simulations respectively. The charge collection mechanism is obtained by analyzing the transient current and charge collection changes at different ion incident positions. Unlike the normal HBT, we can see that charge is continuously collected by the dummy CS junction. This causes more charges diffuse outward and the charges available for collector terminal to be reduced. For all ion incident positions, in the case of hardening, the drift components of charge collection are approximately the same, while the diffusion charge collection components are nearly completely compressed. During SEE, the CS junction either directly collects the deposited charges through drift within the potential funnel or indirectly collects charges after they have arrived at the junction after diffusion. The diffusion length of the carriers is on the order of tens of microns or more. Hence a dummy CS junction should be able to reduce the quantity of diffusive charges collected by the HBT collector. The actual cha