中文摘要：

为研究不同偏置条件对SiGe异质结双极晶体管（HBT）剂量率效应的影响,采用半导体模拟软件Sentaurus TCAD构建了SiGe HBT三维数值仿真模型,研究了不同剂量率、不同偏置条件下SiGe HBT在γ瞬时辐照时各端口电流瞬变峰值随时间的变化及Gummel特性曲线的变化。结果表明,器件各端口的电流瞬变峰值随剂量率的增加而增加;不同端口对γ瞬时辐射响应的最劣偏置不同。同一端口在不同偏置条件下的瞬变电流也不同：集电极瞬变电流在衬底反偏时较大,基极瞬变电流在截止偏置时较大,衬底瞬变电流在衬底反偏时较大。产生这些现象的主要原因是不同偏置条件下载流子输运方式的变化和外加电场的影响。

英文摘要：

Dose rate effects of SiGe heterojunction bipolar transistor （HBT） with differ- ent biases were studied. A three-dimensional numerical simulation model of SiGe HBT was established with Sentaurus TCAD software, and the changes of Gummel character- istics and transient current peaks of each terminal with time at different dose rates were simulated. The results show that transient current peaks of each terminal increase with dose rate. The worst biases for dose rate effect were different for different terminals. For the same terminal, the transient current peak is different, the transient current of collector is large under substrate reverse bias, the transient current of base is large under cut-off bias and transient current of substrate is large under substrate reverse bias. The main reason for the phenomena is that different biases affect the change of carrier transport mode and the applied electric field.