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Nano-indentation study on the (001) face of KDP crystal based on SPH method
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:O734[理学—晶体学] TG115.51[金属学及工艺—物理冶金;金属学及工艺—金属学]
  • 作者机构:[1]Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian Universityof Technology, Dalian 116024, China
  • 相关基金:Project supported by the National Basic Research Program of China (No. 51135002), and the Science Fund for Creative Research Groups (No. 51321004).
中文摘要:

In order to avoid the defects of mesh distortion when dealing with large deformation problems through using the finite element method,a mess-free simulation method—smooth particle hydrodynamics(SPH) has been introduced.The material constitutive model of KDP crystal has been established based on the elastic-plastic theory.Then the nano-indentation on the(001) face of KDP crystal has been carried out using SPH method.Simulation results show that the maximum equivalent stress and the maximum plastic strain concentrate on the area that located near the tip of the indenter during the loading process.The distribution shape of Von Mises stress is similar to concentric circles.During the unloading process,no obvious variation of plastic strain distribution exists.The maximum Von Mises stress is mainly located at the indentation and its edge at the end of the unloading process.The approximate direct proportion relationship between the maximum indentation depth and the depth of the maximum Von Mises stress distribution has been discovered when the maximum load is lower than 8 mN.In addition,the nano-indentation experiments on KDP crystal’s(001) face have been carried out.Both the material parameters and the adjusted stress-strain curve have been verified.The hindering role of the affected layer has been found and analyzed.

英文摘要:

In order to avoid the defects of mesh distortion when dealing with large deformation problems through using the finite element method, a mess-free simulation method--smooth particle hydrodynamics (SPH) has been introduced. The material constitutive model of KDP crystal has been established based on the elastic-plastic theory. Then the nano-indentation on the (001) face of KDP crystal has been carried out using SPH method. Simulation results show that the maximum equivalent stress and the maximum plastic strain concentrate on the area that located near the tip of the indenter during the loading process. The distribution shape of Von Mises stress is similar to concentric circles. During the unloading process, no obvious variation of plastic strain distribution exists. The maximum Von Mises stress is mainly located at the indentation and its edge at the end of the unloading process. The approximate direct proportion relationship between the maximum indentation depth and the depth of the maximum Von Mises stress distribution has been discovered when the maximum load is lower than 8 mN. In addition, the nano-indentation experiments on KDP crystal's (001) face have been carried out. Both the material parameters and the adjusted stress-strain curve have been verified. The hindering role of the affected layer has been found and analyzed.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754