中文摘要：

采用射频磁控溅射法在石英玻璃基片上制备出ZnO：Al薄膜,并对薄膜在不同O2/Ar比状态下的沉积厚度、结晶性能和导电性能之间的关系进行了探讨。测试结果表明：在0.2Pa的额定压强下,Ar流量越大,薄膜的厚度越大,XRD峰越强,薄膜的电阻率（ρ）值越低。在纯氩气状态下溅射时,制得的薄膜具有最大的厚度值,约为2.06μm,并具有最强的XRD峰,ρ同时也达到最小值,阻值为2.66×10^-4Ω·cm。研究表明：结晶性能的提高对薄膜ρ的降低起到了关键作用,而厚度的增加也会使电阻率下降。

英文摘要：

Thin ZnO：Al（AZO）films were prepared on the quartz substrates by using rf magnetron sputtering method,and the effects of O2/Ar ratio on the thickness,crystallization and conductivity of the thin films were investigated.Results shown that under a certain pressure,the films gain larger thickness and higher conductvity with increasing flow rate of Ar.The sample prepared in the pure Ar ambience can gain the lowest resistivity because of the high crystallization and large thickness.The thickness and resistivity is 2.06 μm and 2.66×10^-4 Ω·cm respectively.As shown by the results,we found that the high crystallization is the crucial factor for decreasing resistivity and the large thickness will decrease it as well.