中文摘要：

室温下利用射频磁控溅射在Pt／Ti／SiO2／Si（100）上淀积了约200nm厚的PZT铁电薄膜，在N2（纯度为99．999％）气氛中以不同升温速率进行快速热退火，采用X射线衍射法表征其残余应力。结果表明，薄膜中的应力不是二维应力而是三维应力，且除了切应力σ22以外的大部分应力张量的分量为张应力；薄膜中张应力的增大主要是由于氧空位与晶粒尺寸共同作用的结果，而该应力的减小是由于晶粒尺寸在薄膜应力演变过程中占主导地位所致。

英文摘要：

PZT ferroelectric thin films with thickness 200nm on Pt/Ti/SiO2/Si（100） substrate were prepared by RF magnetron sputtering at the room temperature. The films got fast thermal annealing at different heating rate in the N2 （99. 999%, purity） atmosphere,and X ray diffraction method was used to characterize the residual stress of the PZT thin films. The results indicate that the stress in the film is not two-dimensional but three-dimensional,and the most components of the stress tensor are the tensile stress except for the shear stress σ22： tensile stress increasing in the thin film is mainly due to the oxygen vacancies and the grain size, while the reducing is caused by the dominance of the grain size in the evolution process of the film stress.