中文摘要：

采用单源化学气相沉积（SSCVD）法,在石英衬底上以Au为缓冲层,Zn4（OH）2（O2CCH3）6·2H2O为固相源制备ZnO薄膜。SEM和XRD测试ZnO薄膜的微结构,结果表明：相对于SiO2衬底上生长的ZnO薄膜,Au/SiO2衬底上生长的ZnO薄膜具有较好的结晶质量和表面平整度;对制备ZnO薄膜的衬底温度进行了工艺优化,结果表明：500℃时制备的ZnO薄膜颗粒大小均匀,结晶质量较好;通过荧光光谱仪对Au/SiO2衬底上的ZnO薄膜进行光致发光（PL）谱测试,ZnO薄膜在400nm出现紫光发射峰,而没有出现与缺陷相关的深能级发射峰,表明ZnO薄膜具有较好的结晶质量。

英文摘要：

Taking [Zn4（OH）2（O2CCH3）6·2H2O] as solid sources,ZnO thin films were deposited on quartz and gold-plated quartz substrates by SSCVD technique at normal pressure.The structure and morpho-logy of the samples was characterized by scanning electron microscope （SEM） and X-ray diffraction （XRD）,respectively,while the optical properties were estimated by photoluminescence（PL） spectra.The results showed that the ZnO thin films with Au buffer layer is of high crystallinic qualities and is highly c-axis oriented.The prepared ZnO thin films on gold-plated quartz substrates at 500 ℃ are found to be compact and uniform,with better crystallinic qualities.A strong band edge emission in the PL spectra associated with the free exciton emission is observed at about 400 nm,while other emissions related to specific defects could be negligible compared with the intensive UV emission,which indicated that the ZnO thin films has low concentration of defects and high crystal qualities.