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Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

ISSN号：1674-1056
期刊名称：Chin.Phys.B
时间：2015
页码：027305-1-027305-5
分类：TN304[电子电信—物理电子学] TN304.21[电子电信—物理电子学]
作者机构：[1]Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China, [2]Center for Engineering Training and Basic Experimentation, Heilongjiang University of Science and Technology, Harbin 150022, China
相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 51172058）, the Key Project of the Science Technology and Research Project of Education Bureau, Heilongjiang Province, China （Grant No. 12521z012）, and the Natural Science Foundation of Heilongjiang Province for Returned Chinese Scholars, China （Grant No. LC2013C17）.
相关项目：一维InGaO3(ZnO)m异质超晶格纳米结构的可控合成及其场效应晶体管

作者： Wen Jing|Pan Si-Ming|Liu Xin|Zhang Xi-Tian|

关键词：超晶格结构, ZNO, 纳米带, 氧化铟, 合成, 电性能, 化学气相沉积法, 透射电子显微镜, In2O3（ZnO）m, superlattice, electrical properties

中文摘要：

One-dimensional（ID） In2O3（ZnO）m superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the In2O3（ZnO）m superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cm-1 is found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the In2O3（ZnO）m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.

英文摘要：

One-dimensional（ID） In2O3（ZnO）m superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the In2O3（ZnO）m superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cm^-1 is found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the In2O3（ZnO）m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.

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