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中文摘要：
采用化学气相沉积法合成了In掺杂ZnO纳米带,并对其进行了X射线衍射、光致发光及透射电镜表征.基于单根纳米带,采用廉价微栅模板法制备了背栅场效应管,利用半导体参数测试仪测量了场效应管的输出（Ids-Vds）和转移（Ids-Vgs）特性,得出相关电学参数,其中迁移率值为622 cm2·V-1·s-1,该值明显优于包括ZnO在内的大多数材料;讨论了迁移率提高的可能原因.
英文摘要：
Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the lowcost microgrid template method. The output（Ids-Vds） and transfer（Ids-Vgs） characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2·V-1·s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
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