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高质量单晶 In2Ge2O7纳米带的合成和生长机制探究
  • ISSN号：1000-985X
  • 期刊名称：《人工晶体学报》
  • 时间：0
  • 分类：O643[理学—物理化学;理学—化学]
  • 作者机构：[1]哈尔滨师范大学物理与电子工程学院,光电带隙材料省部共建教育部重点实验室,哈尔滨150025
  • 相关基金：国家自然科学基金（51172058,11074060）;黑龙江省自然科学基金重点项目（ZD201112）;高等学校博士点基金联合资助项目（20112329110001）;黑龙江省研究生创新科研项目（YJSCX2012-186HLJ,YJSCX2012-187HLJ）
作者： 马新志[1], 张佳音[1], 刘欣[1], 温静[1], 高琼[1], 李凯[1], 牟洪臣[1]
关键词： In2Ge2O7, 纳米带, 合成, 生长机制, In2Ge2O7 , nanobeh, growth mechanism
中文摘要：

采用CVD法成功合成了高质量单晶In2Ge2O7纳米带，采用高分辨透射电子显微镜（HRTEM）图像以及x射线衍射（XRD），能谱元素分布图像等对产物进行了表征。结果表明，生长的纳米带长几十微米、厚度50nm，几乎没有缺陷且In，Ge，O元素分布均匀。此外，基于热力学原理对单晶纳米带的生长机制进行了讨论。

英文摘要：

High quality In2Ge2O7 single crystal nanobehs were synthesized by chemical vapor deposition method. The product were characterized by HRTEM, XRD and colored elemental maps. The results indicate that In2Ge2O7 nanobelts have a uniform thickness of 50 nm and the length of several tens of micrometers, there are almost no defects in the atoms matrix. The growth mechanism of the In2Ge2O7 nanobelts was also investigated based on the thermodynamics.

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期刊信息
  • 《人工晶体学报》
  • 中国科技核心期刊
  • 主管单位:中国建材工业协会
  • 主办单位:中国硅酸盐学会 晶体生长与材料专业委员会 中材人工晶体研究院
  • 主编：余明清
  • 地址：北京市733信箱
  • 邮编：100018
  • 邮箱：
  • 电话：010-65492963 65492968 65493320
  • 国际标准刊号：ISSN：1000-985X
  • 国内统一刊号：ISSN：11-2637/O7
  • 邮发代号:
  • 获奖情况:
  • 1997年获国家科技优秀期刊,获部级优秀科技期刊奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:9943