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2～3μmGaAs基InAs/GaSb超晶格材料
  • ISSN号：1007-2276
  • 期刊名称：《红外与激光工程》
  • 时间：0
  • 分类：TN304.2+3[电子电信—物理电子学]
  • 作者机构：[1]中国科学院半导体研究所超晶格国家重点实验室,北京,100083 中国科学院半导体研究所超晶格国家重点实验室,北京,100083 中国科学院半导体研究所超晶格国家重点实验室,北京,100083 中国科学院半导体研究所超晶格国家重点实验室,北京,100083 中国科学院半导体研究所超晶格国家重点实验室,北京,100083
  • 相关基金：国家自然科学基金资助项目(60607016:60625405)
作者： 郝瑞亭[1], 徐应强[1], 周志强[1], 任正伟[1], 牛智川[1]
关键词： GaSb, InAs/GaSb超晶格, GAAS, 分子束外延
中文摘要：

采用分子束外延方法在GaAs(100)衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10 K光荧光谱峰值波长在2～2.6 μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整.InAs/GaSb超晶格材料的成功生长是制备这类红外探测器件重要的第一步.

同期刊论文项目
1.7-2.5μm GaInNAs(Sb)/GaAs近红外材料生长及其器件应用
期刊论文 16 会议论文 2
超晶格与量子阱半导体材料
期刊论文 202 会议论文 29 专利 4
同项目期刊论文
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Room temperature continuous wave operation 1.59 μm GaInNAsSb quantum well lasers
Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
1.58 mu m InGaAs quantum well laser on GaAs
Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers
1.3μm量子点垂直腔面发射激光器高频响应的优化设计
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
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The influence of growth interruption on quantum dot laser
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Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
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可用于弱光探测器的量子线研究进展
InAs/GaSb Ⅱ型超晶格的拉曼和光致发光光谱
Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu;m In0.5Ga0.5As/GaAs
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
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Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots
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Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
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Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells
Spin Relaxation of Electrons in Single InAs Quantum Dots
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs
Fine structural splitting and exciton spin relaxation in single InAs quantum dots
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单光子源低密度长波长InAs/GaAs量子点的制备
Long-wavelength light emission from self-assembled heterojunction quantum dots
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High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
Low threshold current density 1.3m metamorphic InGaAs/GaAs quantum well laser diodes
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
Single-photon emission from a single InAs quantum dot
Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well
Effect of growth temperature on crystal quality and surface morphology of InAs/GaSb superlattices
Spectroscopy of long wavelength coupled quantum dots
Phase transition of self-assembled InAs on GaAs (331) a surface
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress
Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam
Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers
GaAs nanostructures formed by self-assembled droplet epitaxy
MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam epi
GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长
Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy
Room temperature continuous wave operation 1.59 μm GaInNAsSb quantum well lasers
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InAs／GaSbⅡ型超晶格的拉曼和光致发光光谱
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GaAs基短周期InAs／GaSb超晶格红外探测器研究
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期刊信息
  • 《红外与激光工程》
  • 中国科技核心期刊
  • 主管单位:中国航天科工集团
  • 主办单位:天津津航技术物理研究所
  • 主编：张锋
  • 地址：天津市空港经济区中环西路58号
  • 邮编：300308
  • 邮箱：irla@csoe.org.cn
  • 电话：022-58168883 /4/5
  • 国际标准刊号：ISSN：1007-2276
  • 国内统一刊号：ISSN：12-1261/TN
  • 邮发代号:6-133
  • 获奖情况:
  • 1996年获航天系统第五次科技期刊评比三等奖,1998年获航天系统第六次科技期刊评比二等奖,1997-2001年在天津市科技期刊评估中被评为一级期刊
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  • 被引量:17466