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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN304.26[电子电信—物理电子学] TN304.23[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 60625405）, and the National Basic Research Program of China （Grant Nos. 2007CB936304 and 2010CB327601）.Acknowledgment The authors would like to thank Dr. Zhang Hao for photoluminescence measurements.
作者： 贺继方[1], 牛智川[1], 常秀英[1], 倪海桥[1], 朱岩[1], 李密锋[1], 尚向军[1]
关键词： 分子束外延生长, 砷化镓薄膜, 锗化合物, 基板, 半导体光电器件, 高温退火, 薄膜质量, 应变量子阱, molecular beam epitaxy, anti-phase domain, GaAs/Ge interface
中文摘要：

Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated.A high quality GaAs/Ge interface and GaAs film on Ge have been achieved.High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains.The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition.The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed.High quality In 0.17 Ga 0.83 As/GaAs strained quantum wells have also been achieved on a Ge substrate.Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate.These results indicate a large application potential for Ⅲ-Ⅴ compound semiconductor optoelectronic devices on Ge substrates.

英文摘要：

Molecular beam epitaxy growth of GaAs on an offcut Ge （100） substrate has been systemically investigated. A high quality GaAs/Ge interface and CaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality InonTGao.s3As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for Ⅲ-Ⅴcompound semiconductor optoelectronic devices on Ge substrates.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406