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1.3μm量子点垂直腔面发射激光器高频响应的优化设计
  • ISSN号：1000-3290
  • 期刊名称：物理学报
  • 时间：0
  • 页码：7-10
  • 语言：中文
  • 分类：O471.1[理学—半导体物理;理学—物理]
  • 作者机构：[1]中国科学院半导体研究所,北京100083
  • 相关基金：国家重点基础研究发展规划（批准号;TG2000036603）,国家重点基金资助项目（批准号：60137020）和国家高技术研究发展计划（批准号：2002AA12080）资助的课题.
  • 相关项目：超晶格与量子阱半导体材料
作者： 杨晓红|牛智川|韩勤|彭红玲|
关键词： 量子点, 垂直腔面发射激光器, 微分增益, 3曲带宽, quantum dots, vertical-cavity surface-emitting laser, differential gain, 3 dB bandwidth
中文摘要：

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了有源层P掺杂结构的量子点VCSEL的材料增益和3dB带宽，发现P掺杂结构可以大大提高频率特性．结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求．设计了高频率响应的含氧化限制层的1．3μm量子点VCSEL结构．

英文摘要：

Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 μm quantum dot vertical-cavity surface-emitting laser （QD VCSEL） are theoretically investigated. Some methods are developed to improve the VCSEL＇ s modulation response. Significant improvement are prediced for p-type modulatlon doping. [n connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed.

同期刊论文项目
新一代的GaInNAs长波长光电子功能器件及基础问题研究
期刊论文 2
超晶格与量子阱半导体材料
期刊论文 202 会议论文 29 专利 4
同项目期刊论文
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy
Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers
1.58 μm InGaAs quantum well laser on GaAs
Room temperature continuous wave operation 1.59 μm GaInNAsSb quantum well lasers
Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
1.58 mu m InGaAs quantum well laser on GaAs
Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
Extremely low density InAs quantum dots with no wetting layer
GaSb bulk materials and InAs/GaSb superlattices grown by MBE on GaAs substrates
Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot la
Dephasing rate in an InAs/GaAs single-electron quantum dot qubit
Angular dependent characteristics of a 1.3-μm GalnNAs/GaAs quantum-well resonant cavity enhanced
Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance
Design and analysis of 1.3 mu m GaAs-based quantum dot vertical-cavity surface-emitting lasers
Performance of 1064 nm RCE photodetectors
Effect of rapid thermal annealing on highly strained InGaAs/GaAs quantum well
Thermal annealing induced structure change in MBE grown InGaNAs alloys for 1.3 μm emission
Analysis of series resistance of oxide-aperture confined vertical-cavity surface-emitting lasers
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Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure
Enhancement of ferromagnetic transition temperature in (Ga, Mn)As by post-growth annealing
Surface morphology control of strained InAsGaAs (331) A films: From nanowires to island-pit pairs
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Measuring spin diffusion of electrons in bulk n -GaAs using circularly dichromatic absorption differ
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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrare
Direct observation of excitonic polaron in InAs/GaAs quantum dots
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Tuning photoluminescence of single InAs quantum dot by electric field
MBE方法在GaAs(001)衬底上外延生长GaSb膜
The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
Optically controlled quantum dot gated transistors with high on/off ratio
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Formation of GaAs uniform dot structures grown by MBE on patterned substrates
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PL characterization of GaAs ridge-QWRs structures grown by MBE on non-planar substrates
MBE growth and lateral carrier confinement characterization of triangular-shaped dot-like structure
Effects of atomic hydrogen on surface morphology of GaAs grown by MBE on high index substrates
Study of self-assembled InAs quantum dots grown on low temperature GaAs epilayer
Influence of InxGa1-xAs (0&lex&le0.3) cap layer on structural and optical properties of self-assembl
1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycle
Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping laye
InAs/GaAs single-electron quantum dot qubit
Formation of InAs quantum dots on low-temperature GaAs epi-layer
Exited-state lasing of InAs/GaAs self-organized quantum dot
The influence of growth interruption on quantum dot laser
Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures
Effect of InxGa1-xAs (0&lex&le0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs qu
A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
1.55 μm low-temperature-grown GaAs resonant cavity enhanced photodetector
1.3 μm InGaAs/InAs/GaAs self-assembled quantum dot laser diode grown by molecular beam epitaxy
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Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantu
Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers
Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs q
Surface morphology evolution of strained InAs/GaAs(331)A films
Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffe
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
Room temperature continuous wave operation of 1.33-μm InAs/GaAs quantum dot laser with high outpu
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Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination
Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical e
Self-organized InAs quantum wires on GaAs (331)A substrates
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Quantum-confined stark effect of vertically stacked self-assembled quantum discs
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Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrat
Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combin
Electron transport through coupled quantum dots
Optical spectra and exciton state in vertically stacked self-assembled quantum discs
Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well
The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
Analysis on a flattop response resonant cavity enhanced (RCE) photodetector
Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices
Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 mu m emission self-assemble
Role of interactions in electronic structure of a two-electron quantum dot molecule
Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and In
Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer
High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room
Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electro
Excitonic energy of vertically stacked self-assmbled InAs quantum dots
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Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m
可用于弱光探测器的量子线研究进展
InAs/GaSb Ⅱ型超晶格的拉曼和光致发光光谱
Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu;m In0.5Ga0.5As/GaAs
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitax
Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots
InAs/GaSb superlattices for photodetection in short wavelength infrared range
Multi-quantum-well InGaNAs/GaAs one mirror inclined three-mirror cavity photodetector operating at 1
Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
Hole Spin Relaxation in an Ultrathin InAs Monolayer
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells
Spin Relaxation of Electrons in Single InAs Quantum Dots
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs
Fine structural splitting and exciton spin relaxation in single InAs quantum dots
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
Electron spin relaxation by nuclei and holes in single InAs quantum dots
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot
异变生长GaAs基长波长InAs垂直耦合量子点
单光子源低密度长波长InAs/GaAs量子点的制备
Long-wavelength light emission from self-assembled heterojunction quantum dots
Single-photon-emitting diode at liquid nitrogen temperature
Morphology evolution of (331) A high-index surfaces during atomic hydrogen assisted molecular beam e
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
Low threshold current density 1.3m metamorphic InGaAs/GaAs quantum well laser diodes
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
Single-photon emission from a single InAs quantum dot
Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well
Effect of growth temperature on crystal quality and surface morphology of InAs/GaSb superlattices
Spectroscopy of long wavelength coupled quantum dots
Phase transition of self-assembled InAs on GaAs (331) a surface
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress
Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam
Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers
GaAs nanostructures formed by self-assembled droplet epitaxy
InAs／GaSbⅡ型超晶格的拉曼和光致发光光谱
2～5μm InAs／GaSb超晶格红外探测器
2～3μmGaAs基InAs/GaSb超晶格材料
生长温度对InAs／GaSb超晶格晶体结构和表面形貌的影响
GaAs基短周期InAs／GaSb超晶格红外探测器研究
1．55μm低温生长GaAs谐振腔增强型探测器
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876