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2～5μm InAs／GaSb超晶格红外探测器
  • ISSN号：1007-2276
  • 期刊名称：《红外与激光工程》
  • 时间：0
  • 分类：TN215[电子电信—物理电子学]
  • 作者机构：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083
  • 相关基金：国家自然科学基金（60607016：60625405）
作者： 徐应强[1], 汤宝[1], 王国伟[1], 任正伟[1], 牛智川[1]
关键词： InAs/GaSb超晶格, 红外探测器, 分子束外延, InAs/GaSb superlattices, infrared photodetector, molecular beam epitaxy
中文摘要：

采用分子束外延方法在GaSb和GaAs衬底上生长了不同周期厚度的InAs／GaSb高质量II型能带结构超晶格红外探测器，其探测波长覆盖2～5μm红外波段。采用高分辨透射电子显微镜、原子力显微镜、X射线衍射测试、室温与低温光电流响应谱及室温与低温光荧光谱等多种测试手段检验了分子束外延生长在不同衬底上的超晶格材料质量与光学质量。该材料用于制造2～5μmGaAs基与GaSb基InAs／GaSb超晶格红外探测器。在77K温度下，2μm波段GaAs基InAs／GaSb超晶格红外探测器探测率为4×10^9cm·Hz^1/2／w，5μm波段GaSb基InAs／GaSb超晶格红外探测器探测率为1．6×10^100cm·Hz^1／2／W。

英文摘要：

High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy （MBE）. The detection wavelengths of these InAs/GaSb SLs infrared detectors were 2-5 μm. The material and optical qualities of InAs/ GaSb superlattices on different substrates by MBE were characterized by different measurement methods, including high resolution transmission electron microscope （HRTEM）, atomic force microscope （AFM）, X-ray diffraction （XRD）, low temperature （LT） and room temperature （RT） photo response spectrum and LT and RT photoluminescence （PL） spectrum. Then 2-5 μm GaAs and GaSb based infrared photodetectors were fabricated by these InAs/GaSb type-II band alignment superlattices materials. The detectivity of the 2 μm GaAs based InAs/GaSb SLs photodetector is 4×10^9cm·Hz^1/2/W at 77K and that of the 5 μm GaSb based InAs/GaSb SLs photodetector is 1.6×10^9cm·Hz^1/2/W at the same temperature.

同期刊论文项目
超晶格与量子阱半导体材料
期刊论文 202 会议论文 29 专利 4
1.7-2.5μm GaInNAs(Sb)/GaAs近红外材料生长及其器件应用
期刊论文 16 会议论文 2
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Evolution of surface morphology and photoluminescence characteristics of 1.3-mu;m In0.5Ga0.5As/GaAs
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
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Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots
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Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells
Spin Relaxation of Electrons in Single InAs Quantum Dots
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs
Fine structural splitting and exciton spin relaxation in single InAs quantum dots
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High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
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Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
Single-photon emission from a single InAs quantum dot
Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well
Effect of growth temperature on crystal quality and surface morphology of InAs/GaSb superlattices
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Phase transition of self-assembled InAs on GaAs (331) a surface
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Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam
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GaAs nanostructures formed by self-assembled droplet epitaxy
MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam epi
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Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy
Room temperature continuous wave operation 1.59 μm GaInNAsSb quantum well lasers
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期刊信息
  • 《红外与激光工程》
  • 中国科技核心期刊
  • 主管单位:中国航天科工集团
  • 主办单位:天津津航技术物理研究所
  • 主编：张锋
  • 地址：天津市空港经济区中环西路58号
  • 邮编：300308
  • 邮箱：irla@csoe.org.cn
  • 电话：022-58168883 /4/5
  • 国际标准刊号：ISSN：1007-2276
  • 国内统一刊号：ISSN：12-1261/TN
  • 邮发代号:6-133
  • 获奖情况:
  • 1996年获航天系统第五次科技期刊评比三等奖,1998年获航天系统第六次科技期刊评比二等奖,1997-2001年在天津市科技期刊评估中被评为一级期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:17466