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On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 时间:0
  • 分类:TN16[电子电信—物理电子学] P618.130.2[天文地球—矿床学;天文地球—地质学]
  • 作者机构:[1]State Key Laboratory of Transducer Technology, National Key Laboratory of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences,Shanghai 200050, China, [2]Graduate University of Chinese Academy of Sciences, Beijing 100049, China
  • 相关基金:Supported by the Hi-Tech Research and Development Program of China (Grant No. 2006AA04Z312) and National Basic Research Program of China (Grant No. 2006CB300403)
中文摘要:

经由阳极化的系统的调查有图案并且 unpatterned 标本,关于毛孔尺寸的显著差异的现象,毛孔密度和毛孔蚀刻率被证实。把显微图和当前电压的曲线基于扫描电子显微镜(SEM ) 的详细分析,在物理、化学的元素之间的比赛被发现对理解观察关键。结果显示毛孔的尺寸,密度和生长速度可以充当样品表面的起始的形态学的明显的功能,尽管有空间费用区域的将近固定的宽度。象 current-burst-model (CBM ) 一样的电场的效果被采用解释内在的机制。

英文摘要:

Via systematic investigation of the anodization of both patterned and unpatterned specimens, phe-nomena of pronounced discrepancy with respect to pore size, pore density and pore etch-rate were evidenced. Based on the detailed analysis of scanning electron microscope (SEM) micrographs and current-voltage curves, the competition between physical and chemical elements was found to be cru- cial to understanding the observations. The results indicate that the size, density and growth-speed of pores may act as an evident function of the initial morphology of the sample surface, despite a nearly fixed width of the space charge region. Electric-field effect as well as current-burst-model (CBM) was employed to interpret the underlying mechanism.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406