通过亲水角和表面形貌两个标准,探究了介质阻挡放电电压对低温阳极键合材料性能的影响。实验采用1 mm厚的玻璃片和2 mm厚的氧化铝陶瓷片作为阻挡介质,在放电时间为10 s,放电间隙1.5 mm的放电条件下进行活化。实验表明,放电电压为24 kV时,活化效果较好,此时玻璃片亲水角14.3°,硅片亲水角33.5°,玻璃片粗糙度为0.643 nm,硅片粗糙度0.419 nm。
The effect of dielectric barrier discharge voltage on the properties of low temperature anodic bonding materialswas investigated by two criteria,hydrophilic angle and surface topography. In the experiment,1mm thick glass plate and 2 mm thick alumina ceramic plate were used as the dielectrics,and the activation time is 10 s and discharge gap is 1. 5 mm. The experimental results show that the activation effect is best when the voltage is 24 kV,the angle of the glass hydrophilic decrease to 14. 53°,the angle of silicon hydrophilic decrease to 30. 17°,the roughness of glass decrease to 0. 643 nm,roughness of silicon substrate changes to 0. 419 nm.