Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability
- ISSN号：1674-4926
- 期刊名称：《半导体学报：英文版》
- 时间：0
- 分类：TN386[电子电信—物理电子学] TJ760.623[兵器科学与技术—武器系统与运用工程]
- 作者机构：[1]Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123,China, [2]University of Chinese Academy of Sciences, Beijing 100049, China, [3]Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China, [4]Nanjing University of Science and Technology, school of materials science and engineering, Nanjing 210094, China, [5]Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China
- 相关基金：supported by the Key Technologies Support Program of Jiangsu Province（No.BE2013002-2）; the National Key Scientific Instrument and Equipment Development Projects of China（No.2013YQ470767）
作者：
Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, Shichuang Sun, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
中文摘要：
Corresponding author. Email： bszhang2006@sinano.ac.cn
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