采用射频磁控溅射技术在透明导电氧化铟锡(ITO)玻璃上沉积了不同工作压强和不同氧分压(氧氩比)条件下的WO3薄膜并研究了其电致变色特性。采用X射线衍射分析(XRD)和扫描电子显微镜(SEM)分析了所制备薄膜的成分结构和表面形貌,采用电化学测试工作站和紫外可见双束分光光度计对薄膜的电致变色循环伏安特性和光调制性能进行了研究。结果表明,射频磁控溅射制备的WO3薄膜的成分结构和电致变色循环伏安特性之间存在着一定的影响关系;相对于氧分压,薄膜沉积过程中的工作压强对WO3薄膜的成分结构和电致变色性能的影响更加明显,随着工作压强的增大,薄膜由晶态逐渐转变为非晶态,薄膜表面微观结构更加粗糙,进而具有更优的循环伏安特性和更宽的光调整范围。
WO3 thin films were deposited on conducting indium-tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering using WO3 ceramic targets at room temperature for electrochromic devices application. The working pressure in the chamber and the O2/Ar ratio during the sputtering process in the plasma gas were investigated as critical parameters to control the col- oration of the WO3 films. The composition, morphology and microstructure of the WO3 films were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Electrochromic and optical reflectance modulation properties were researched by simultane- ous spectrophotometric and cyclic voltammetry measurements in a three-electrode electrochemical cell, respectively. The results indicated that the electrochromic properties had close connection with the microstructure and morphologies in the films and thus could be largely modulated by changing the sputtering parameters. By increasing the sputtering pressure, the crystalline phase changed into amorphous phase gradually, thus improved the cyclic voltammetry properties and optical reflectance modulation of the devices, which exhibited highly electrochromic properties.