纳米CuInSe材料是一种直接带隙半导体材料,其禁带宽度为1.50eV,吸收系数高达10^5cm^-1,在太阳电池领域有着广阔的应用前景。水热及溶剂热法是液相制备纳米粉体的常用方法之一,其用于制备形貌可控的CuInSe光伏材料具有独特的优势。介绍了黄铜矿型CuInSe晶体的结构和性质以及水热及溶剂热法的原理和特点;综述了近年来国内外水热及溶剂热法制备不同形貌与结构CuInSe光伏材料的研究现状,研究了其制备特点及制备机理;最后探讨了目前存在的问题及今后研究的方向。
Nanostruetured copper indium sulfide(CuInS2) material, a critical semiconductor with a direct band gap of 1.5eV alongside its large absorption coefficient (α-10^5 cm^- 1 ), has a good prospect of application in photovoltaic solar cells. As one of the widely used liquid-phase technique to synthesize nanopowders, the hydrothermal and solvothermal approach has attracted significant interest on preparing morphology controllable CuInS2 photovoltaie materials due to its unique advantage in this respect. The crystal structure and properties of the chalcopyrite CuInS2, the principle and characteristics of the hydrothermal and solvothermal route are introduced; the recent development on the synthesis of morphology and structure tailored CuInSe photovoltaic materials by hydrothermal and solvothermal route is described, its characteristic and preparation mechanism are investigated. At last, the difficulties in the present and the prospect in the future for synthesis of CuInSe photovoltaic materials bv hvdrothermal and solvothermal route are discussed.