中文摘要：

针对非制冷980nm半导体激光器组件的封装结构，对采用倒装贴片封装的激光器模块内部芯片外延层、热沉和焊料层进行了优化设计，运用有限元法（FEM）对微型双列直插（mini—DIL）非制冷980nm半导体激光器在连续波（CW）驱动条件下的热场分布进行了模拟计算。对比了倒装贴片和正装贴片的激光器热特性，并对实际封装的激光器光电性能进行了测试。倒装贴片型非制冷980nm半导体激光器的输出光谱在0～70℃时中心波长漂移仅为0．2nm，半峰全宽（FWHM）小于1．6nm，边模抑制比（SMSR）保持在45dB以上，最大出纤功率达200mw。研究结果表明．倒装贴片的非制冷980nm半导体激光器在热稳定性和光电性能方面都有较大提高，能够满足高性能小型化掺铒光纤放大器对非制冷980nm半导体激光器的性能要求。

英文摘要：

According to the packaging structure of uncooled 980 nm semiconductor laser module, the chip epitaxial layer, heat sink and solder layer in the epitaxy （epi）-down bonded lasers module were designed, and the heat distribution of mini-dual in line （DIL） uncooled 980 nm semiconductor laser under the continuous-wave （CW） drive conditions was simulated using the finite element method （FEM）. The thermal properties of epi-down and epi-up bonded lasers were compared, and the photoelectric properties of actual laser module were tested. Epi-down bonded uncooled 980 nm semiconductor laser can work steadily over a wide temperature range of 0--70 ℃ , with a small wavelength shift of 0.2 nm, full-width at half-maximum （FWHM） less than 1.6 nm, side-mode suppression ratio （SMSR） of more than 45 dB, and a high optical power of 200 mW. The results show that the optical and thermal characteristics of epi-down bonded uncooled 980 nm semiconductor laser have been greatly improved, and it can meet the need of high-performance miniature erbium-doped fiber amplifier.