中文摘要：

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌（AZO）导电玻璃上制备了二氧化钒（VO2）薄膜,研究了不同的退火温度、退火时间对VO2/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析.结果表明,导电玻璃上的AZO没有改变VO2的取向生长,但明显改变了VO2薄膜的表面形貌特征.与用相同工艺和条件在普通玻璃基底上制备的VO2薄膜相比,VO2/AZO复合薄膜的相变温度降低约25℃,热滞回线宽度收窄至6℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3个数量级.该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件.

英文摘要：

Vanadium dioxide（VO2） thin films have been fabricated on the ZnO-doped Al conductive glass（AZO） substrates by DC magnetron sputtering and after thermal annealing. Effect of different annealing temperature and time olunation on the VO2/AZO composite films has been studied, then the structure, components and optical-electrical properties of the composite films are tested and analyzed by suitable instruments. Results show that the AZO film deposited on the conductive glass substrate dose not change the preferred orientation growth of the VO2 thin film, but its surface morphology characteristics are changed. Compared with those fabricated on ordinary glass substrates by the same processes and conditions, the phase transition temperature of the VO2/AZO composite film is decreased by about 25℃ , and the width of thermal hysteresis is narrowed to about 6℃ . Before and after phase transition, the visible light transmittance remains higher than 50%, and the infrared transmittances at a wavelength of 1500 nm are 55% and 21%respectively. Furthermore, the resistivity rangeability is also up to three orders of magnitude before and after phase transition. In conclusion, the VO2/AZO composite films are easy to be fabricated and have a high degree of stability,smooth ness and compact surface morphology, thus they may be used to make new photoelectric devices