中文摘要：

采用直流磁控溅射法在掺氟的SnO_2（FTO）导电玻璃衬底上沉积纯钒金属薄膜,再在常压氮氧混合气氛中退火制备VO_2/FTO复合热致变色薄膜,并对复合薄膜的结构、光学特性以及电学特性进行了测试分析。结果表明,薄膜结晶程度较高,表面平滑致密,具有很好的一致性,导电玻璃上的FTO并没有改变VO_2择优取向生长,但明显改变了VO_2薄膜的表面形貌特征。与VO_2薄膜的典型相变温度68℃相比,VO_2/FTO复合薄膜的相变温度降低约20℃,热滞回线收窄到5℃,相变前后的红外透过率分别为45%和22%,相变前后电阻率的变化达3个数量级,VO_2/FTO复合薄膜优良的光电特性对新型光电薄膜器件的设计开发和应用具有重要意义。

英文摘要：

The pure vanadium metal thin films were fabricated on the F-doped SnO_2 conductive glass（FTO） substrates by DC magnetron sputtering at room temperature, and then the VO_2/FTO composite films were prepared by annealing in a mixture of N_2 and O_2. The structure and optical-electrical properties of the composite films were analyzed by instruments. Results show that the crystallinity of the thin film is improved significantly with smooth and uniform surface morphology. VO_2/FTO composite films do not change the preferred orientation growth of VO_2 thin films, but significantly change its surface morphology characteristics. Compared with the VO_2 thin films, the phase transition temperature of the VO_2/FTO composite films is decreased by about 20 °C, the width of thermal hysteresis is narrowed by about 5 °C, and the infrared transmittances before and after phase transition are 45% and 22%, respectively. The resistivity variation is up to three orders of magnitude before and after transition. These characteristics bring about new opportunities for optoelectronic devices and industrial production.