中文摘要：

在低合金钢基体上磁控溅射镀Cr/Cu双层膜，电沉积铜．金刚石复合过渡层，在热丝CVD系统中沉积了连续的金刚石膜。用压痕实验研究了所沉积的金刚石膜／基结合性能，用扫描电镜（SEM）、X射线（XRD）、拉曼光谱表征了金刚石膜的表面形貌、相结构和内应力。结果表明，经CVD金刚石沉积后Cr层转化为铬铁碳化物层，阻止了Fe对界面金刚石的石墨化，并部分缓冲相变应力；较软Cu层能有效缓解相变应力和热应力，降低了所沉积的金刚石膜内应力；用441N载荷对所沉积的金刚石膜进行压痕评估，压痕外缘只产生环状裂纹，表明膜基结合力较高。

英文摘要：

The diamond films were successfully fabricated on low-alloy steel substrate with Cr＋Cu- Diamond interlayer deposited by magnetron sputtering for Cr/Cu and composite electroplating for Cu-dia- mond. The interfacial characteristics were investigated by indentation test and the surface morphology, phase structure and residual stress were analyzed by scanning electron microscopy （SEM）, X-ray diffrac- tion （XRD） and Raman spectroscopy. The results show that the Cr layer on low-alloy substrate prevents Fe from diffusing to Cu/diamond interface effectively by converting into （Cr, Fe）3C2 and （Cr, Fe）,C3 in CVD diamond growth. Low residual stress detected in diamond film can be attributed to the chromium-iron car- bide and copper layer for relieve of phase transformation and thermal stress during CVD cooling process. Concentric cracks with no delaminate area on the periphery of the indentation in 441N load shows good adhesion between diamond and low-alloy steel substrate.