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Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering
ISSN号:1674-1056
期刊名称:Chinese Physics B
时间:2013.1.1
页码:016301-
相关项目:自由站立石墨烯的制备和物理特性研究
作者:
Lin Jing-Jing|Guo Li-Wei|Jia Yu-Ping|Chen Lian-Lian|Lu Wei|Huang Jiao|Chen Xiao-Long|
同期刊论文项目
自由站立石墨烯的制备和物理特性研究
期刊论文 14
同项目期刊论文
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Preparation of Quasi-Free-Standing Graphene with a Super Large Interlayer Distance by Methane Interc
Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics
Anharmonic phonon effects in Raman spectra of unsupported vertical graphene sheets
Approaching the Intrinsic Electron Field-Emission of a Graphene Film Consisting of Quasi-Freestandin
A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates
Influence of defects in SiC (0001) on epitaxial graphene
Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering
期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
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获奖情况:
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被引量:406