中文摘要：

介绍了基于硅基图形衬底的Ⅲ-Ⅴ族材料异质生长的方法,主要包括选区生长Ⅲ-Ⅴ族纳米线和微通道外延薄膜。选区生长Ⅲ-Ⅴ族纳米线可以有效控制Ⅲ-Ⅴ族纳米线的直径,并控制位错扩散,从而可以在硅衬底上生长出高晶体质量的Ⅲ-Ⅴ族材料。同时,微沟道外延可以将位错限制在外延材料中极小范围内,保证外延材料的器件层晶体质量良好。微沟道外延分为两种形式：垂直生长和横向生长,原理分别是高深宽比陷阱和横向过生长。通过这两种生长形式,可以分别制备纳米条及纳米薄膜。硅基图形衬底的设计为Ⅲ-Ⅴ族材料在硅基衬底上集成提供了有效的途径,势必成为Ⅲ-Ⅴ族材料和硅异质集成的主流方法之一。

英文摘要：

The methods ofⅢ-Ⅴ material hetergrowth on patterned silicon substrates are introduced,mainly including selective area growth ofⅢ-Ⅴ nanowires and micro-channel epitaxial thin films.The selective area growth ofⅢ-Ⅴ nanowires can effectively control the diameter ofⅢ-Ⅴnanowires and the diffusion of dislocations,resulting in the growth ofⅢ-Ⅴ materials with high lattice quality grown on the silicon substrates.Meanwhile,the dislocation can be restricted to the limited area in the epitaxial material by micro-channel epitaxy to ensure the good lattice quality in the device layer of the epitaxial material.The micro-channel epitaxy can be classified into the vertical growth by high aspect ratio trapping and horizonal growth by lateral overgrowth,which prepare the nanostrips and nanofilms,respectively.The design of the patterned silicon substrates provides an effective way for integration ofⅢ-Ⅴ materials on silicon-based substrates.Obviously,it can be one of the mainstream methods for the heterogeneous integration ofⅢ-Ⅴ materials and silicon.