东篱科研大数据发现系统（DRDS）

位置：成果数据库 > 期刊 > 期刊详情页

Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN311.7[电子电信—物理电子学] O484[理学—固体物理;理学—物理]
作者机构：[1]Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [2]School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China, [3]State Key Laboratory for Supedattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [4]Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
相关基金：the National Key Research and Development Program of China （Grant No. 2016YFA02005003） and the National Natural Science Foundation of China （Grant Nos. 61376096 and 61327813）.

中文摘要：