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脉冲控制忆阻模拟存储器
  • ISSN号：1008-8105
  • 期刊名称：电子科技大学学报
  • 时间：0
  • 页码：642-647
  • 分类：TM5[电气工程—电器]
  • 作者机构：[1]西南大学电子信息工程学院重庆北碚区400715, [2]重庆大学计算机学院重庆沙坪坝区400033
  • 相关基金：国家自然科学基金（60972155,61101233,60974020）;重庆市自然科学基金（CSTC2009BB2305）;中央高校基本科研业务费专项（XDJK2010C023,XDJK20108005）;中国博士后科学基金（CPSF20100470116）;重庆市高等教育教学改革研究重点项目（09-2-011）;本文研究工作得到西南大学博士科研资助项目（SWUB2008074）和西南大学教育教学改革研究项目（2009JY053,2010JY070）的资助,在此表示感谢.
  • 相关项目：基于忆阻器的混沌神经网络及其在信息处理中的应用
作者： 胡小方|段书凯|王丽丹|李传东|
关键词： 模拟存储器, 交叉阵列, 电荷控制模型, 磁通量控制模型, 忆阻器, analog memory, crossbar array, charge-controlled memristor model, flux-controlled memristor model, memristor
中文摘要：

推导了忆阻器的电荷控制和磁通量控制数学模型，在该基础上研究了其电导状态连续可变的性质和记忆功能。提出了用脉冲控制忆阻器实现模拟信息存储的方案，通过理论分析、实验仿真验证了方案的有效性。结合交叉阵列结构，该方案有望实现大规模模拟存储阵列，推进人工神经网络和模拟式计算机的发展。

英文摘要：

In this paper, the charge-controlled and flux-controlled memristor mathematical models are derived detailedly. The continuously variable conductance and memory properties of memristors are researched. An implementation scheme for analog memory using pulse controlled memristors is proposed, and its effectiveness is verified through theoretical analysis and simulation experiments. With crossbar array structure, the scheme is expected to achieve large-scale analog storage arrays, which may greatly promote the development of artificial neural networks and analog computers.

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期刊信息
  • 《电子科技大学学报：社会科学版》
  • 主管单位:国家教育部
  • 主办单位:电子科技大学
  • 主编：许宣伟
  • 地址：成都市建设北路二段四号
  • 邮编：610054
  • 邮箱：xbshkb@uestc.edu.cn
  • 电话：028-83201443
  • 国际标准刊号：ISSN：1008-8105
  • 国内统一刊号：ISSN：51-1569/C
  • 邮发代号:62-113
  • 获奖情况:
  • 获得第二届全国社科类质量进步奖
  • 国内外数据库收录:
  • 中国国家哲学社会科学学术期刊数据库
  • 被引量:5697