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Contact size scaling of a W-contact phase-change memory cell based on numerical simulation
  • ISSN号:1674-4926
  • 期刊名称:半导体学报
  • 时间:2012.10.15
  • 页码:53-57
  • 分类:TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TN302[电子电信—物理电子学]
  • 作者机构:[1]Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China, [2]TSRC, Key Laboratoryof Microelectronic Devices and Circuits, Institute of Microelectronics, School of Electronicsand Computer Science, Peking University, Beijing 100871, China, [3]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
  • 相关基金:supported by the National Natural Science Foundation of China(No.61176099); the Open Project of the State Key Laboratory of Functional Materials for Informatics,ChinaAcknowledgement We would like to thank Mr. Jin Rong for the fruitful discusslons
  • 相关项目:相变存储器件OTS与OMS物理机理和模型研究
中文摘要:

<正>In the design of phase-change memory(PCM),it is important to perform numerical simulations to predict the performances of different device structures.This work presents a numerical simulation using a coupled system including Poisson’s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change memory.This method discriminates the common numerical simulation of PCM cells,from which it applies Possion’s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change materials.The results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

英文摘要:

In the design of phase-change memory(PCM),it is important to perform numerical simulations to predict the performances of different device structures.This work presents a numerical simulation using a coupled system including Poisson's equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change memory.This method discriminates the common numerical simulation of PCM cells,from which it applies Possion's equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change materials.The results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754