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A SPICE model for a phase-change memory cell based on the analytical conductivity model

ISSN号：0253-4177
期刊名称：半导体学报
时间：2012.11.11
页码：114004-
分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TP393[自动化与计算机技术—计算机应用技术;自动化与计算机技术—计算机科学与技术]
作者机构：[1]The Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China, [2]Peking University Shenzhen SOC Key Laboratory, PKU-HKUST, Shenzhen-Hong Kong Institute, Shenzhen 518055, China, [3]Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, School of Electronics and ComputerScience, Peking University, Beijing 100871, China
相关基金：supported by the National Natural Science Foundation of China（Nos.61176099,61006032,60925015）
相关项目：硅基纳米尺度新结构器件

关键词：相变存储器, 模型分析, 存储单元, SPICE模型, 基础, VERILOG-A, 传导, 外围电路, phase-change memory compact model analytical conductivity

中文摘要：

<正>By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ—Ⅴcharacteristics and the programming characteristics accurately.

英文摘要：

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

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