采用直流等离子体CVD法制备了金刚石膜,利用X射线衍射、光学显微镜、扫描电镜、激光拉曼光谱等技术研究了金刚石膜的微观组织,晶粒择优取向生长过程。结果表明:开始形核时,晶粒随机无择优生长;对基体表面氢刻蚀预处理,有利于晶胚形核长大。甲烷浓度对金刚石膜晶粒择优取向生长有重要影响:甲烷浓度较低时,金刚石膜(100)面择优生长,形成以(111)为主的八面体晶体,并且可以制取中心和边缘均匀、高质量光学级自支撑金刚石膜,但生长速率慢,效率低。同时也发现金刚石膜存在空位、孔洞等缺陷。
Diamond film wafers were prepared by high power DC-plasma jet CVD method. The microstrures and the orientation of grain growth for the diamond film were studied by XRD, OM. SEM and Raman spectroscop. The results showed that grains grew in random orientation. Atom hydrogen etching benefited the nucleation and growth of crystal embryo. Methane concentration has important influence on the preferentially orientated growth of the grains. Upon a low methane concentration, (111) facet of the diamond film grew in preferential orientation, and an octahedron crystal was formed. Finally the optical diamond film with uniform center and edge, high quality was prepared. Adopting high power DC-plasma jet CVD method, the speed of growth of diamond was lower. Meantime, the vacancies and vacancy clusters were also found.