保持等离子体弧源稳定性对于制备大尺寸平面金刚石膜极其重要,故从理论和实验两个方面对等离子体弧源稳定性进行了分析。研究表明,为了保持弧源的稳定,必须在生长过程中,保持稳定的电子温度和均匀的活性原子及原子基团密度。金刚石膜在某些条件下长时间生长时,会发生阳极环积碳现象,导致等离子体弧源扰动失稳,从而引起生长的金刚石膜含有石墨杂质。通过预处理阳极环、控制碳源、加大氢气量等措施可保持弧源稳定。在此条件下生长金刚石膜,经SEM,Raman分析表明,其晶粒均匀、晶界清晰,仅有金刚石特征峰出现。
Plasma arc source stability is theoretically and experimentally investigated. Results show that to keep the stability of the arc source, the electron temperature is to be constant, the active atom and the radical density uniformity are to be uniform during the film growth. In certain long-time growth of the diamond film, there is sediment carbon phenomenon on the border-entad anode annulus, thus resulting in fluctuating and instability of the plasma arc source, and causing graphite generation on the film. By pretreating anode annulus ,controlling the supply of carbon source and increasing H2 flux,it still keeps arc source stability. Under the condition of diamond growth, by utilizing SEM, Raman it is found that the film has a symmetrical crystal and the clear boundary, and only the diamond Raman peak appears.