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高压ns光电导开关及其击穿特性研究
  • 期刊名称：高电压技术, 35(1):59-63,2009
  • 时间：0
  • 分类：TN304.23[电子电信—物理电子学] TM564[电气工程—电器]
  • 作者机构：[1]Applied Physics Department, Xi＇an University of Technology, Xi＇an 710048, China, [2]State Key Laboratory of Electrical Insulation and Power Equipment,Xi＇an Jiaotong University, Xi＇an 710049, China
  • 相关基金：supported by the Key Project of National Natural Science Foundation of China （No. 50837005）; the National Science Foundation of China （Nos. 10876026, 51107099）; the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment （No. EIPE09203）; the Natural Science Foundation of Shaanxi Province （No. 2010JM7003）; the Scientific Research Program Funded by Shaanxi Provincial Education Department （No. 11JK0540）; the Foundation for Outstanding Doctoral Dissertation of Xi＇an University of Technology （105-210904）
  • 相关项目：高电压高倍增砷化镓光电导开关关键技术研究
关键词： 半绝缘砷化镓, 光电开关, 表面闪络, 激光触发, 实验, 高功率, 半导体表面, 光导开关, GaAs, photoconductive switches, photo-activated charge domain, longevity
中文摘要：

swshi@mail.xaut.edu.cn

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高电压高倍增砷化镓光电导开关关键技术研究
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