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Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors
  • ISSN号：1998-0124
  • 期刊名称：Nano Research
  • 时间：2013.7.7
  • 页码：535-545
  • 相关项目：基于碳纳米管的高性能CMOS器件和集成电路研究
作者： Liang, Shibo|Zhang, Zhiyong|Pei, Tian|Li, Ruoming|Li, Yan|Peng, Lianmao|
同期刊论文项目
基于碳纳米管的高性能CMOS器件和集成电路研究
期刊论文 20 专利 5
同项目期刊论文
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Carbon Nanotube Field-Effect Transistors for Use as Pass Transistors in Integrated Logic Gates and F
Carbon Nanotube Based Multifunctional Ambipolar Transistors for AC Applications
Measurements and microscopic model of quantum capacitance in graphene
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Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and
Doping-free carbon nanotube optoelectronic devices
CMOS-based carbon nanotube pass-transistor logic integrated circuits
Carbon nanotube based ultra-low voltage integrated circuits: Scaling down to 0.4V
Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and
Efficient photovoltage multiplication in carbon nanotubes
期刊信息
  • 《纳米研究：英文版》
  • 主管单位:中华人民共和国教育部
  • 主办单位:清华大学 中国化学会
  • 主编：戴宏杰 李亚栋
  • 地址：北京市海淀区清华大学学研大厦A座5-7层
  • 邮编：100084
  • 邮箱：zhangjin@mail.tup.tsinghua.edu.cn
  • 电话：010-62783933
  • 国际标准刊号：ISSN：1998-0124
  • 国内统一刊号：ISSN：11-5974/O4
  • 邮发代号:
  • 获奖情况:
  • 第三届中国出版政府奖
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,英国科学文摘数据库
  • 被引量:60