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High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits
  • ISSN号：1001-6538
  • 期刊名称：Chinese Science Bulletin
  • 时间：2012.1.1
  • 页码：135-148
  • 分类：TN386.1[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构：[1]Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
  • 相关基金：This work was supported by the Ministry of Science and Technology of China （2011CB933001, 2011CB933002）, the Fundamental Research Funds for Central Universities, and the National Natural Science Foundation of China （61071013, 61001016）.
  • 相关项目：基于碳纳米管的高性能CMOS器件和集成电路研究
作者： Zhang ZhiYong|Wang Sheng|Peng LianMao|
关键词： 单壁碳纳米管, CMOS器件, 集成电路制造, 互补金属氧化物半导体, 兴奋剂, 性能, MOS场效应管, 场效应晶体管, carbon nanotube, field-effect transistor, doping-free, complementary metal-oxide-semiconductor, high frequency
中文摘要：

Corresponding author （email： zyzhang@pku.edu.cn）

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