位置：成果数据库 > 期刊 > 期刊详情页
Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and
  • ISSN号：1616-301X
  • 期刊名称：Advanced Functional Materials
  • 时间：2011.5.5
  • 页码：1843-1849
  • 相关项目：基于碳纳米管的高性能CMOS器件和集成电路研究
作者： Pei, Tian|Zhang, Zhiyong|Wang, Zhenxing|Ding, Li|Wang, Sheng|Peng, Lian-Mao|
同期刊论文项目
基于碳纳米管的高性能CMOS器件和集成电路研究
期刊论文 20 专利 5
同项目期刊论文
Electronic transport in single-walled carbon nanotube/graphene junction
Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dir
Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor
Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current-Voltage Meas
Graphene-based ambipolar electronics for radio frequency applications
Carbon Nanotube Field-Effect Transistors for Use as Pass Transistors in Integrated Logic Gates and F
Carbon Nanotube Based Multifunctional Ambipolar Transistors for AC Applications
Measurements and microscopic model of quantum capacitance in graphene
High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits
Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and
Doping-free carbon nanotube optoelectronic devices
CMOS-based carbon nanotube pass-transistor logic integrated circuits
Carbon nanotube based ultra-low voltage integrated circuits: Scaling down to 0.4V
Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors
Efficient photovoltage multiplication in carbon nanotubes