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Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dir
  • ISSN号：1936-0851
  • 期刊名称：ACS Nano
  • 时间：2011.6.6
  • 页码：5031-5037
  • 相关项目：基于碳纳米管的高性能CMOS器件和集成电路研究
作者： Xu, Huilong|Zhang, Zhiyong|Xu, Haitao|Wang, Zhenxing|Wang, Sheng|Peng, Lian-Mao|
同期刊论文项目
基于碳纳米管的高性能CMOS器件和集成电路研究
期刊论文 20 专利 5
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