n-type ZnS used as electron transport material in organic light-emitting diodes
- ISSN号:1674-1056
- 期刊名称:《中国物理B:英文版》
- 时间:0
- 分类:O47[理学—半导体物理;理学—物理] TN312.8[电子电信—物理电子学]
- 作者机构:[1]Key Laboratory of Luminescence and Optical Information, Ministry of Education,China Institute of Optoelectronic Technology, Belting Jiaotong University, Beijing 100044, China
- 相关基金:Project supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned 0verseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).
关键词:
OLEDS, n型ZnS, 电子运输层, 亮度, 效率, 功能发光二极管, OLEDs, n-type ZnS, electron transport layer, luminance, efficiency
中文摘要:
E-mail: xqzhang@center.njtu.edu.cn